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| ST083SPbF Series Vishay High Power Products Inverter Grade Thyristors (Stud Version), 85 A FEATURES * Center amplifying gate * High surge current capability * Low thermal impedance * High speed performance * Compression bonding * Lead (Pb)-free TO-209AC (TO-94) RoHS COMPLIANT * Designed and qualified for industrial level TYPICAL APPLICATIONS * Inverters PRODUCT SUMMARY IT(AV) 85 A * Choppers * Induction heating * All types of force-commutated converters MAJOR RATINGS AND CHARACTERISTICS PARAMETER IT(AV) IT(RMS) 50 Hz ITSM 60 Hz 50 Hz 60 Hz VDRM/VRRM tq TJ Range TEST CONDITIONS VALUES 85 TC 85 135 2450 2560 30 27 400 to 1200 10 to 20 - 40 to 125 V s C UNITS A C A A A kA2s I2 t ELECTRICAL SPECIFICATIONS VOLTAGE RATINGS TYPE NUMBER VOLTAGE CODE 04 08 ST083S 10 12 1000 1200 1100 1300 VDRM/VRRM, MAXIMUM REPETITIVE PEAK VOLTAGE V 400 800 VRSM, MAXIMUM NON-REPETITIVE PEAK VOLTAGE V 500 900 30 IDRM/IRRM MAX. AT TJ = TJ MAX. mA Document Number: 94334 Revision: 25-Jul-08 For technical questions, contact: ind-modules@vishay.com www.vishay.com 1 ST083SPbF Series Vishay High Power Products Inverter Grade Thyristors (Stud Version), 85 A CURRENT CARRYING CAPABILITY ITM 180 el 180 el ITM 100 s ITM FREQUENCY UNITS 50 Hz 400 Hz 1000 Hz 2500 Hz Recovery voltage Vr Voltage before turn-on Vd Rise of on-state current dI/dt Case temperature Equivalent values for RC circuit 210 200 150 70 50 VDRM 50 60 22/0.15 120 120 80 25 50 50 85 330 350 320 220 50 VDRM 60 22/0.15 270 210 190 85 50 85 2540 1190 630 250 50 VDRM 60 22/0.15 1930 810 400 100 50 85 V A/s C /F A ON-STATE CONDUCTION PARAMETER Maximum average on-state current at case temperature Maximum RMS on-state current SYMBOL IT(AV) IT(RMS) TEST CONDITIONS 180 conduction, half sine wave DC at 77 C case temperature t = 10 ms Maximum peak, one half cycle, non-repetitive surge current ITSM t = 8.3 ms t = 10 ms t = 8.3 ms t = 10 ms Maximum I2t for fusing I2 t t = 8.3 ms t = 10 ms t = 8.3 ms Maximum I2t for fusing Maximum peak on-state voltage Low level value of threshold voltage High level value of threshold voltage Low level value of forward slope resistance High level value of forward slope resistance Maximum holding current Typical latching current I2t VTM VT(TO)1 VT(TO)2 rt1 rt2 IH IL No voltage reapplied 100 % VRRM reapplied No voltage reapplied 100 % VRRM reapplied VALUES 85 85 135 2450 2560 2060 Sinusoidal half wave, initial TJ = TJ maximum 2160 30 27 21 19 300 2.15 1.46 1.52 2.32 2.34 600 1000 m mA V kA2s kA2s A UNITS A C t = 0.1 to 10 ms, no voltage reapplied ITM = 300 A, TJ = TJ maximum, tp = 10 ms sine wave pulse (16.7 % x x IT(AV) < I < x IT(AV)), TJ = TJ maximum (I > x IT(AV)), TJ = TJ maximum (16.7 % x x IT(AV) < I < x IT(AV)), TJ = TJ maximum (I > x IT(AV)), TJ = TJ maximum TJ = 25 C, IT > 30 A TJ = 25 C, VA = 12 V, Ra = 6 , IG = 1 A www.vishay.com 2 For technical questions, contact: ind-modules@vishay.com Document Number: 94334 Revision: 25-Jul-08 ST083SPbF Series Inverter Grade Thyristors (Stud Version), 85 A SWITCHING PARAMETER Maximum non-repetitive rate of rise of turned on current Typical delay time SYMBOL dI/dt td TEST CONDITIONS TJ = TJ max., VDRM = Rated VDRM, ITM = 2 x dI/dt TJ = 25 C, VDM = Rated VDM, ITM = 50 A DC, tp = 1 s Resistive load, gate pulse: 10 V, 5 source TJ = TJ maximum, ITM = 100 A, commutating dI/dt = 10 A/s VR = 50 V, tp = 200 s, dV/dt = 200 V/s 10 VALUES MIN. MAX. UNITS A/s Vishay High Power Products 1000 0.80 s 20 Maximum turn-off time tq BLOCKING PARAMETER Maximum critical rate of rise of off-state voltage Maximum peak reverse and off-state leakage current SYMBOL dV/dt IRRM, IDRM TEST CONDITIONS TJ = TJ maximum, linear to 80 % VDRM, higher value available on request TJ = TJ maximum, rated VDRM/VRRM applied VALUES 500 30 UNITS V/s mA TRIGGERING PARAMETER Maximum peak gate power Maximum average gate power Maximum peak positive gate current Maximum peak positive gate voltage Maximum peak negative gate voltage Maximum DC gate currrent required to trigger Maximum DC gate voltage required to trigger Maximum DC gate current not to trigger Maximum DC gate voltage not to trigger SYMBOL PGM PG(AV) IGM + VGM - VGM IGT VGT IGD VGD TJ = 25 C, VA = 12 V, Ra = 6 TJ = TJ maximum, tp 5 ms TEST CONDITIONS TJ = TJ maximum, f = 50 Hz, d% = 50 VALUES 40 5 5 20 5 200 3 20 0.25 UNITS W A V mA V mA V TJ = TJ maximum, rated VDRM/VRRM applied THERMAL AND MECHANICAL SPECIFICATIONS PARAMETER Maximum junction operating temperature range Maximum storage temperature range Maximum thermal resistance, junction to case Maximum thermal resistance, case to heatsink SYMBOL TJ TStg RthJC RthCS DC operation Mounting surface, smooth, flat and greased Non-lubricated threads Mounting torque, 10 % Lubricated threads Approximate weight Case style See dimensions - link at the end of datasheet TEST CONDITIONS VALUES - 40 to 125 - 40 to 150 0.195 0.08 15.5 (137) 14 (120) 130 UNITS C K/W N*m (lbf * in) g TO-209AC (TO-94) Document Number: 94334 Revision: 25-Jul-08 For technical questions, contact: ind-modules@vishay.com www.vishay.com 3 ST083SPbF Series Vishay High Power Products Inverter Grade Thyristors (Stud Version), 85 A RthJC CONDUCTION CONDUCTION ANGLE 180 120 90 60 30 SINUSOIDAL CONDUCTION 0.034 0.041 0.052 0.076 0.126 RECTANGULAR CONDUCTION 0.025 0.042 0.056 0.079 0.127 TJ = TJ maximum K/W TEST CONDITIONS UNITS Note * The table above shows the increment of thermal resistance RthJC when devices operate at different conduction angles than DC 130 130 Maximum Allowable Case Temperature (C) Maximum Allowable Case Temperature (C) ST083S Series RthJC (DC) = 0.195 K/W 120 120 110 100 90 80 70 ST083S Series RthJC (DC) = 0.195 K/W 110 O O Conduction angle 100 Conduction period 30 60 90 120 0 20 40 60 80 180 100 DC 120 140 90 30 80 0 10 20 30 40 50 60 70 80 90 60 90 120 180 Average On-State Current (A) Fig. 1 - Current Ratings Characteristics Average On-State Current (A) Fig. 2 - Current Ratings Characteristics 180 180 Maximum Average On-State Power Loss (W) Maximum Average On-State Power Loss (W) 160 140 120 100 80 60 40 20 0 0 10 180 120 90 60 30 160 140 120 100 80 60 40 20 0 25 0.4 0. 0.5 0. 3 K/ W 2 R th K/ W SA = 0. K/ W 1 K/ RMS limit K/ W W - R 0.8 1.2 K/W K/W O Conduction angle ST083S Series TJ = 125 C 20 30 40 50 60 70 80 90 50 75 100 125 Average On-State Current (A) Maximum Allowable Ambient Temperature (C) Fig. 3 - On-State Power Loss Characteristics www.vishay.com 4 For technical questions, contact: ind-modules@vishay.com Document Number: 94334 Revision: 25-Jul-08 ST083SPbF Series Inverter Grade Thyristors (Stud Version), 85 A 250 250 R Vishay High Power Products Maximum Average On-State Power Loss (W) Maximum Average On-State Power Loss (W) 200 150 DC 180 120 90 60 30 th 200 0.2 0.4 0.3 SA = RMS limit K/ W 0. 1 K/ W 150 0.5 100 K/W K/W - R K/W 100 O Conduction period ST083S Series TJ = 125 C K/W 1.2 K /W 0.8 50 50 0 0 20 40 60 80 100 120 140 0 25 50 75 100 125 Average On-State Current (A) Maximum Allowable Ambient Temperature (C) Fig. 4 - On-State Power Loss Characteristics At any rated load condition and with rated VRRM applied following surge Initial TJ = 125 C at 60 Hz 0.0083 s at 50 Hz 0.0100 s 2000 1800 1600 1400 1200 1000 1 10 Instantaneous On-State Current (A) 2200 10 000 Peak Half Sine Wave On-State Current (A) TJ = 25 C 1000 TJ = 125 C ST083S Series ST083S Series 100 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 100 Number of Equal Amplitude Half Cycle Current Pulses (N) Fig. 5 - Maximum Non-Repetitive Surge Current Instantaneous On-State Voltage (V) Fig. 7 - On-State Voltage Drop Characteristics 2600 2400 Maximum non repetitive surge current versus pulse train duration. Control of conduction may not be maintained Initial TJ = 125 C No voltage reapplied Rated VRRM reapplied ZthJC - Transient Thermal Impedance (K/W) 1 Steady state value RthJC = 0.195 K/W (DC operation) Peak Half Sine Wave On-State Current (A) 2200 2000 1800 1600 1400 1200 ST083S Series 0.1 ST083S Series 1000 0.01 0.1 1 0.01 0.001 0.01 0.1 1 10 Pulse Train Duration (s) Fig. 6 - Maximum Non-Repetitive Surge Current Square Wave Pulse Duration (s) Fig. 8 - Thermal Impedance ZthJC Characteristic Document Number: 94334 Revision: 25-Jul-08 For technical questions, contact: ind-modules@vishay.com www.vishay.com 5 ST083SPbF Series Vishay High Power Products Inverter Grade Thyristors (Stud Version), 85 A 160 120 Qrr - Maximum Reverse Recovery Charge (C) Irr - Maximum Reverse Recovery Current (A) 140 120 ST083S Series TJ = 125 C ITM = 500 A ITM = 300 A ITM = 200 A 110 100 90 80 70 60 50 40 30 20 10 10 20 30 40 50 60 ITM = 500 A ITM = 300 A ITM = 200 A ITM = 100 A 100 ITM = 100 A 80 60 ITM = 50 A 40 20 10 20 30 40 50 60 70 80 90 100 ITM = 50 A ST083S Series TJ = 125 C 70 80 90 100 dI/dt - Rate of Fall of On-State Current (A/s) Fig. 9 - Reverse Recovered Charge Characteristics dI/dt - Rate of Fall of Forward Current (A/s) Fig. 10 - Reverse Recovery Current Characteristics 10 000 Peak On-State Current (A) Peak On-State Current (A) Snubber circuit Rs = 22 Cs = 0.15 F VD = 80 % VDRM 100 1500 1000 500 400 200 2000 2500 3000 10 000 Snubber circuit Rs = 22 Cs = 0.15 F VD = 80 % VDRM 50 Hz 400 500 200 100 1000 50 Hz 1000 1000 1500 2000 2500 3000 100 tp ST083S Series Sinusoidal pulse TC = 60 C 100 tp ST083S Series Sinusoidal pulse TC = 85 C 1000 10 000 10 10 100 1000 10 000 10 10 100 Pulse Basewidth (s) Fig. 11 - Frequency Characteristics Pulse Basewidth (s) 10 000 10 000 Peak On-State Current (A) Peak On-State Current (A) Snubber circuit Rs = 22 Cs = 0.15 F VD = 80 % VDRM 1000 1500 2500 2000 500 50 Hz tp ST083S Series Trapezoidal pulse TC = 85 C dI/dt = 50 A/s Snubber circuit Rs = 22 Cs = 0.15 F VD = 80 % VDRM 1000 50 Hz 500 1500 100 1000 400 200 100 100 1000 2000 2500 400 200 100 3000 tp ST083S Series Trapezoidal pulse TC = 60 C dI/dt = 50 A/s 1000 10 000 10 10 100 10 10 100 1000 10 000 Pulse Basewidth (s) Fig. 12 - Frequency Characteristics Pulse Basewidth (s) www.vishay.com 6 For technical questions, contact: ind-modules@vishay.com Document Number: 94334 Revision: 25-Jul-08 ST083SPbF Series Inverter Grade Thyristors (Stud Version), 85 A 10 000 Snubber circuit Rs = 22 Cs = 0.15 F VD = 80 % VDRM 400 50 Hz Vishay High Power Products 10 000 Peak On-State Current (A) Peak On-State Current (A) tp ST083S Series Trapezoidal pulse TC = 85 C dI/dt = 100 A/s Snubber circuit Rs = 22 Cs = 0.15 F VD = 80 % VDRM 1000 1000 400 500 50 Hz 1000 1500 500 200 2000 2500 3000 100 100 100 2000 1500 200 100 tp ST083S Series Trapezoidal pulse TC = 60 C dI/dt = 100 A/s 1000 10 000 1000 2500 10 10 100 10 10 100 1000 10 000 Pulse Basewidth (s) Fig. 13 - Frequency Characteristics Pulse Basewidth (s) 10 000 10 000 Peak On-State Current (A) Peak On-State Current (A) 20 joules per pulse 10 tp ST083S Series Rectangular pulse dI/dt = 50 A/s 4 2 1 0.5 0.3 0.2 1000 0.5 0.3 0.2 0.1 12 3 5 20 joules per pulse 7.5 1000 100 ST083S Series Sinusoidal pulse tp 100 0.1 10 10 100 1000 10 000 10 10 100 1000 10 000 Pulse Basewidth (s) Pulse Basewidth (s) Fig. 14 - Maximum On-State Energy Power Loss Characteristics 100 Instantaneous Gate Voltage (V) 10 Rectangular gate pulse a) Recommended load line for rated dI/dt: 20 V, 10 ; tr 1 s b) Recommended load line for 30 % rated dI/dt: 10 V, 10 tr 1 s TJ = 125 C (1) PGM = 10 W, (2) PGM = 20 W, (3) PGM = 40 W, (4) PGM = 60 W, (a) (b) TJ = 40 C TJ = 25 C tp = 20 ms tp = 10 ms tp = 5 ms tp = 3.3 ms 1 VGD IGD 0.1 0.001 0.01 (1) (2) (3) (4) Device: ST083S Series 0.1 1 Frequency limited by PG(AV) 10 100 Instantaneous Gate Current (A) Fig. 15 - Gate Characteristics Document Number: 94334 Revision: 25-Jul-08 For technical questions, contact: ind-modules@vishay.com www.vishay.com 7 ST083SPbF Series Vishay High Power Products Inverter Grade Thyristors (Stud Version), 85 A ORDERING INFORMATION TABLE Device code ST 1 1 2 3 4 5 6 7 8 9 08 2 3 3 S 4 12 5 P 6 F 7 N 8 0 9 PbF 10 - Thyristor - Essential part number - 3 = Fast turn-off - S = Compression bonding stud - Voltage code x 100 = VRRM (see Voltage Ratings table) - P = Stud base 1/2"-20UNF-2A threads - Reapplied dV/dt code (for tq test condition) - tq code - 0 = Eyelet terminals (gate and aux. cathode leads) 1 = Fast-on terminals (gate and aux. cathode leads) dV/dt - tq combinations available dV/dt (V/s) tq (s) 10 up to 800V 20 tq (s) only for 20 1000/1200 V 200 FN FK FK 10 - PbF = Lead (Pb)-free LINKS TO RELATED DOCUMENTS Dimensions http://www.vishay.com/doc?95003 www.vishay.com 8 For technical questions, contact: ind-modules@vishay.com Document Number: 94334 Revision: 25-Jul-08 Legal Disclaimer Notice Vishay Disclaimer All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, "Vishay"), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay's terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 18-Jul-08 www.vishay.com 1 |
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